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| !""#!$#%& ' ' ( )*) + , !- % .( $ ( $ $/ 0 " 11 + ( !$ 1 ! ! ! " #$ %! & ! ! ' #$ (! ) ) *$ ) ( + , ! (! ) ) + - . $/0 #1*$ * ) (! 2!- ! !! % $34 - (0 " # % ! #/# $34 - (0 " ** % " ! $/5 + , ! 2!- ! !! 2 $34 - (0 6"! ( # , ( 0 ' # 7$ ( + , ! (! +-! + + - . #$ 0 ' #8$ 9 :! . ! ! 2!- ! ) ) 2 2 #/#0 + ! /$/ ) (! !! ) ) 0 + ! /# & ' # 340 ) #$) /8 2 ' ' /7 .! ' ' % ! /#$5 19 ' % " ! /#; !"# $%& forward voltage 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 D1FS4 tl=150 c [max] tl=25 c [max] pulse measurement per diode tl=150 c [typ] tl=25 c [typ] forward voltage v f [v] forward current i f [a] 10 100 D1FS4 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tl=25 c typ per diode junction capacitance reverse current 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 D1FS4 tl=150 c [max] tl=150 c [typ] pulse measurement per diode tl=125 c [typ] tl=100 c [typ] tl=75 c [typ] reverse voltage v r [v] reverse current i r [ma] 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 D1FS4 0.3 reverse power dissipation tj = 150 c sin 0.2 0.5 d=0.05 dc 0.1 0.8 0 t p v r t d=t p /t reverse voltage v r [v] reverse power dissipation p r [w] 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 0 0.5 1 1.5 2 D1FS4 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 0 0.5 1 1.5 2 D1FS4 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 0.5 1 1.5 2 0 20 40 60 80 100 120 140 160 D1FS4 0.3 derating curve v r = 20v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r alumina substrate soldering land 2mm 2mm conductor layer 20 m substrate thickness 0.64mm ambient temperature ta [ c] average rectified forward current i o [a] 0 t p i o t d=t p /t 0 0.4 0.8 1.2 1.6 0 20 40 60 80 100 120 140 160 D1FS4 0.3 derating curve v r = 20v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r glass-epoxy substrate soldering land 2mm 2mm conductor layer 35 m ambient temperature ta [ c] average rectified forward current i o [a] peak surge forward capability 0 10 20 30 40 50 60 1 10 100 D1FS4 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=125 c before surge current is applied t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp 0 20 40 60 80 100 120 0 50 100 150 sbd repetitive surge reverse power derating curve junction temperature tj [ c] p rrsm derating [%] 0.1 1 10 1 10 100 sbd repetitive surge reverse power capability pulse width t p [ m s] p rrsm (t p ) / p rrsm (t p =10 m s) ratio t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp |
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